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 INTEGRATED CIRCUITS
DATA SHEET
TEA1566 GreenChipTM; SMPS module
Preliminary specification File under Integrated Circuits, IC11 1999 Apr 20
Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
FEATURES Distinctive features * High level of integration results in 20 to 50 fewer components compared to a power supply with discrete components * On-chip 600 V MOSFET * On/off function replaces expensive mains switch with functional switch * Direct off-line operation (90 to 276 VAC) * On-chip 5% accurate oscillator. Green features * Low power consumption in off-mode (<100 mW) * On-chip efficient start-up current source giving fast start-up * Burst mode stand-by (<2 W) for overall improved system efficiency * Low power operation mode with lower frequency to reduce switching losses. Protection features * Demagnetization protection * Cycle by cycle current limitation with programmable current trip level * Over voltage protection * Over temperature protection * Safe-restart mode with reduced power for system fault conditions. Highly versatile * Usable in Buck and flyback topology * Interfaces both primary and secondary side feedback. GENERAL DESCRIPTION
TEA1566 5
4 3 2 1 9 Vin mains
TEA1566
APPLICATIONS
output
8 NC 7 6 OOB Dem Gnd Vctrl Iref Vaux Isense
MGR691
Fig.1 Typical flyback application.
The GreenChipTM, intended for off-line 90 to 276 VAC power supply applications, is a monolithic high voltage family of ICs that combines analog and digital circuits to implement all necessary control functions for a switched mode power supply. The functions include integrated high voltage start-up current source, voltage mode PWM control, 5% accurate trimmed oscillator, band gap derived reference voltages, comprehensive fault protection, and leading edge blanking. High level of integration leads to cost effective power supplies that are compact, weigh less, and at the same time give higher efficiency, are more reliable and simple to design. Efficient green features lead to very low power operation modes and a novel on/off function helps replace the expensive mains switch with a low cost functional switch.
1999 Apr 20
2
Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TEA1566S TEA1566J BLOCK DIAGRAM SIL9P DBS9P DESCRIPTION plastic single in-line power package; 9 leads plastic DIL-bent-SIL power package; 9 leads (lead length12 mm)
TEA1566
VERSION SOT131-2 SOT157-2
handbook, full pagewidth
Iref 3
Vaux 2
Vin 9
VAUX MANAGEMENT ON/OFF 7 1 k
START-UP CURRENT SOURCE
OOB
TEA1566
5.5 V burst mode stand-by OVER TEMPERATURE PROTECTION R Q S 6 driver stage power MOSFET
Vctrl
4 SAMPLE AND HOLD1 6 DEMAGNETIZATION MANAGEMENT NEGATIVE CLAMP 5 Gnd 8 NC SAMPLE AND HOLD2 error amplifier PWM comparator
OVER CURRENT PROTECTION LEADING EDGE BLANKING FREQUENCY CONTROL
Dem
OSCILLATOR
1
MGR692
Isense
Fig.2 Block diagram.
1999 Apr 20
3
Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
PINNING SYMBOL Isense Vaux Iref Vctrl Gnd Dem OOB NC Vin PIN 1 2 3 4 5 6 7 8 9 DESCRIPTION programmable current sense resistor IC supply capacitor reference resistor for setting internal reference currents feedback voltage for duty cycle control ground demagnetization input signal from primary side auxiliary winding on/off/burst mode input signal not connected MOSFET drain connection
TEA1566
An efficient on-chip start-up circuit enables fast start-up and dissipates negligible power after start up. On-chip accurate oscillator generates a saw tooth waveform which is used by the voltage mode feedback control circuitry to generate a pulse width modulated signal for driving the gate of the power MOSFET. A novel regulation scheme is used to implement both primary and secondary side regulation to minimize external component count. Protection features like over voltage, over current, over temperature, and demagnetization protection, give comprehensive safety against system fault conditions. The GreenChipTM offers some advanced features that greatly enhance the efficiency of the overall system. Off-mode reduces the power consumption of the IC below 100 mW. Burst mode stand-by reduces the power consumption of the system to below 2 W. Low power operation mode reduces the operating frequency of the system, when the system is working under low load conditions, to reduce the switching losses. Start-up current source and Vaux management
handbook, halfpage
Isense Vaux Iref Vctrl Gnd Dem OOB NC Vin
1 2 3 4 5 6 7 8 9
MGR693
A versatile on-chip start-up current source makes an external, highly dissipating, trickle-charge circuit unnecessary. See Fig.2 for the block diagram of the IC. The start-up current source derives power from the mains via pin Vin (drain). It supplies current (see symbols `Istart-low' and `Istart-high' of Chapter "Characteristics") to charge the Vaux (IC supply) capacitor and at the same time provides current to the control circuitry of the IC. Once the Vaux capacitor is charged to its start-up voltage level (11 V), the on-chip oscillator starts oscillating and the IC starts switching the power MOSFET. Power is then supplied to the load capacitor via the secondary winding. Figure 1 shows a typical flyback application diagram. The Vaux capacitor is also supplied by an auxiliary winding on the primary side. This winding is coupled to the secondary side winding supplying the output capacitor. As the output capacitor voltage increases and approaches its nominal value, the re-supply of the Vaux capacitor is done by the auxiliary winding. Figure 4 shows relevant waveforms at start-up. For successful take over of supply of Vaux capacitor by the auxiliary winding, it is important that the re-supply of Vaux capacitor starts before its voltage drops to its Under Voltage Lockout (UVLO) level of 8.05 V of the system and stops delivering power to the output.
TEA1566
Fig.3 Pin configuration.
FUNCTIONAL DESCRIPTION The GreenChipTM family of ICs are highly integrated, with most common PWM functions like error amplifier, oscillator, bias current generator, and band gap based reference voltage circuits fully integrated in the ICs. High level of integration leads to easy and cost effective design of power supplies.The ICs have been fabricated in a Philips proprietary high voltage BCDMOS process that enables devices of up to 720 V to be fabricated on the same chip with low voltage circuitry.
1999 Apr 20
4
Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
In case of output short circuit, the Vaux capacitor is no longer supplied by the auxiliary winding and its voltage drops till it reaches the UVLO level. If the output is an open circuit, the output voltage will rise till it reaches the Over Voltage Protection (OVP) level. The IC will detect this state and stop switching. In absence of switching of the power device, the Vaux capacitor will not be re-supplied and its voltage will drop till it reaches UVLO level. Once the Vaux voltage drops to UVLO level, the start-up current source is re-activated and it charges the Vaux capacitor to its start level and the system goes through a cycle similar to the start-up cycle. Figure 5 shows the relevant waveforms during safe-restart mode. The charging current (see symbol `Irestart-prot' in Chapter "Characteristics") from the start-up circuit during the safe-restart mode is lower than the normal start-up current (see symbol `Istart-high' in Chapter "Characteristics") in order to implement a low "hiccup" duty cycle. This helps insure devices on the output secondary winding do not get destroyed during output short circuit, violating safety conditions. The start-up current source also plays a key role in implementation of burst mode stand-by (see symbol `Irestart-stby' in Chapter "Characteristics"), which will be explained later.
TEA1566
11 V Vaux
(2)
8.05 V
(1)
t Vout
t
Vgate
off
switching
t
MGR694
(1) Start-up current charges capacitor Vaux. (2) Charging of capacitor Vaux is taken-over by the auxiliary winding.
Fig.4 Normal start-up waveforms.
handbook, full pagewidth
Vaux fault condition normal operation
(1)
MGR695
t Vgate
switching
off
t
(1) Start-up current source charges capacitor Vaux.
Fig.5 Safe-start mode waveforms.
1999 Apr 20
5
Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
Reference All reference voltages are derived from a temperature compensated, on-chip, band gap. The band gap reference voltage is also used, together with an external resistor connected at pin Iref, to generate accurate, temperature independent, bias currents in the chip: V REF I REF = ------------- [A] R REF The frequency of the controller is also set by the reference resistor Rref (also see Section "Oscillator"). Sample and hold GreenChipTM ICs employ voltage mode feedback for regulating the output voltage. In primary feedback mode, a novel sample and hold circuit is used. The sample and hold circuit works by sampling the current into pin Dem, which is related to the output voltage via Rdem, during the time that the secondary current is flowing: a x Vout = Iref x Rdem + Vdem+ where: Vdem+ is specified in chapter "Characteristics" a = a constant determined by turn ratio of the transformer. Oscillator
TEA1566
The oscillator is used to set the switching duty cycle by comparing the oscillator ramp to the output of the error amplifier in the pulse width modulator circuit.The oscillator is fully integrated and works by charging and discharging an internal capacitor between two voltage levels to create a sawtooth waveform with a rising edge which is 80% of the oscillator cycle. This ratio is used to set a maximum switching duty cycle of 80% for the IC. The oscillator is internally trimmed to 5% accuracy. The oscillator frequency can be adjusted between 50 to 100 kHz (see symbol fosc-h-range in Chapter "Characteristics") by changing the external reference resistor (see symbol Rref in Chapter "Characteristics") that sets the chip bias currents. This gives additional flexibility to the power supply designer in the choice of his system components.The frequency is correlated with the value of the reference resistor Rref (see Fig.6). In Chapter "Characteristics" fosc-typical, fosc-l and fosc-h and the Rref operating resistor range are specified.
MGR936
This sampled current information is stored on the external capacitor connected to pin Vctrl. The pulse width modulator uses this voltage information to set the duty cycle of operation for the power MOSFET. In secondary feedback, the feedback voltage is provided by an opto-coupler. Pulse width modulator The pulse width modulator, which is made up of an inverting error amplifier and a comparator (see Fig.2), drives the power MOSFET with a duty cycle which is inversely proportional to the voltage on pin Vctrl. In primary feedback mode, this is the voltage on the sample and hold capacitor and in secondary feedback mode, this voltage is provided by an opto-coupler. A signal from the oscillator sets a latch that turns on the power MOSFET. The latch is reset by the signal from the pulse width modulator or by the duty cycle limiting circuit. The latching PWM mode of operation prevents multiple switching of the power switch. The maximum duty cycle is set internally at 80%. Figure 7 shows the normal switching operation of the IC.
handbook, halfpage
110
55 low frequency (kHz) 45
high frequency (kHz) 90
70
(1) (2)
35
50
25
30 10 20 30 RREF (k)
15 40
(1) High frequency mode. (2) Low frequency mode.
Fig.6 Frequency as function of the RREF value.
1999 Apr 20
6
Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
Multi frequency control The oscillator is also capable of working at a lower frequency (see fosc-l in Chapter "Characteristics"). A ratio of 1 : 2.5 is maintained between high and low frequency of the oscillator. Low frequency operation is invoked if the power supply is working at or below one ninth of its peak power. By working at a lower frequency, the switching losses in the power supply are reduced. A novel scheme is used to ensure that the transfer of high to low frequency and vice versa has no effect on the regulation of the output voltage. Gate driver The gate driver has a totem-pole output stage that has current sourcing capability of 120 mA and a current sink capability of 550 mA. This is to enable fast turn on and turn off of the power device for efficient operation. A lower driver source current has been chosen in order to limit the V/t at switch-on. This is advantageous for EMI (ElectroMagnetic Interference) and reduces the current spike across Rsense. Demagnetization protection This feature guarantees discontinuous conduction mode operation for the power supply which simplifies the design of feedback control and gives faster transient response. Demagnetization protection is an additional protection feature that protects against saturation of the transformer/inductor. Demagnetization protection also protects the power supply components against excessive stresses at start-up, when all energy storage components are completely discharged. The converter is cycle by cycle protected during shorted output system fault condition due to the demagnetization protection. The value of the demagnetization resistor (Rdem) can be calculated with the formula given in Section "Sample and hold". Negative clamp The negative clamp circuit does not let the voltage on pin Dem go below -0.4 V, when the auxiliary winding voltage goes negative during the time that the power device is turned on, to ensure correct operation of the IC. Over voltage protection
TEA1566
An Over Voltage Protection (OVP) mode has been implemented in the GreenChipTM series. This circuit works by sensing the Vaux voltage. If the output voltage exceeds the preset voltage limit, the OVP circuit turns off the power MOSFET. With no switching of the power device, the Vaux capacitor is not re-supplied and discharges to UVLO level and the system goes into the low dissipation safe-restart mode described earlier. The system recovers from the safe-restart mode only if the OVP condition is removed. Over current protection Cycle by cycle Over Current Protection (OCP) is provided by sensing the voltage on an external resistor which is connected to the source of the power MOSFET. The voltage on the current sense resistor, which reflects the amplitude of the primary current, is compared internally with a reference voltage using a high speed comparator. This threshold voltage is specified as Vth(Imax) in the chapter "Characteristics". The maximum primary V th ( Imax ) (protection) current is therefore: I prot = ----------------------- [A] R sense If the power device current exceeds the current limit, the comparator trips and turns off the power device. The power device is typically turned off in 210 ns (see tD in Chapter "Characteristics"). The availability of the current sense resistor off-chip for programming the OCP trip level increases design flexibility for the power supply designer. An off-chip current sense resistor also reduces the risk of an OCP condition being sensed incorrectly. At power MOSFET turn-on the V/t limiters capacitance discharge current does not have to flow through the sense resistor, because this capacitor can be connected between drain and source of the power MOSFET directly. The Leading Edge Blanking (LEB) circuit works together with the OCP circuit and inhibits the operation of the OCP comparator for a short duration (see tLEB in Chapter "Characteristics") when the power device is turned on. This ensures that the power device is not turned off prematurely due to false sensing of an OCP condition because of current spikes caused by discharge of primary-side snubber and parasitic capacitances. LEB time is not fixed and it tracks the oscillator frequency.
1999 Apr 20
7
Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
Over temperature protection Protection against excessive temperature is provided by an analog temperature sensing circuit that turns off the power device when the temperature exceeds typically 140 C. On/off mode The expensive mains switch can be replaced by an in-expensive functional switch by using the on/off mode. Figure 13 shows a flyback converter configured to use the on/off mode. Depending upon the position of switch S1, either voltage close to ground or a voltage of greater than typical 2.5 V exists on pin OOB. The difference between these voltages is detected internally by the IC. The IC goes into the off-mode if the voltage is low, where it consumes a current of typical 350 A (see Iin-off in Chapter "Characteristics"). If the voltage on pin OOB is typically 2.5 V (see Von/off in Chapter "Characteristics"), the IC goes through the start-up sequence and commences normal operation. In Fig.14 a Mains Under Voltage Lock Out (MUVLO) function has been created using 3 resistors. Assuming that R3 is chosen very high ohmic, the GreenChipTM starts R1 operating if: V MAINS ------- x V OOB ( R1 R2 ) R2 In this way it is assured that the power supply only starts working above a Vmains of e.g. 80 V. The bleeder current through R1 should be low (e.g. 30 A at 300 V). Burst mode stand-by
TEA1566
Pin OOB is also used to implement the burst mode stand-by. In burst mode stand-by, the power supply goes into a special low dissipation state where it typically consumes less than 2 W of power. Figure 14 shows a flyback converter using the burst mode stand-by feature. The system enters burst mode when the microcontroller closes switches S2 and S3 on the secondary side. Switch S2 shorts the output capacitor to the voltage level of the microcontroller capacitor. The output secondary winding now supplies the microcontroller capacitor. When the voltage on the microcontroller capacitor exceeds the zener voltage (Vz) the opto-coupler is activated which sends a signal to pin OOB. In response to this signal, the IC stops switching and goes into a "hiccup" mode. Figure 7 shows the burst-mode operation graphically. The hiccup mode during burst mode operation differs from the hiccup in safe-restart mode during system fault. For safe restart mode, the power has to be reduced. For burst mode, sufficient power to supply the microcontroller has to be delivered. To prevent transformer rattle, the transformer peak current is reduced by a factor of 3. Burst mode stand-by operation continues till the microcontroller opens switches S2 and S3. The system then goes through the start-up sequence and commences normal switching behaviour.
1999 Apr 20
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Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
TEA1566
handbook, full pagewidth
Vin
Vin Vdrain
Vout
Vaux
Vgate
Iaux 0
(1)
burst mode
VP
start up sequence
normal operation
over voltage protection
output short circuit
burst mode stand-by
normal operation
MGR696
(1) All negative currents are currents out the chip.
Fig.7 Typical waveforms.
1999 Apr 20
9
Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
TEA1566
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); unless noted all voltages are measured with respect to pin GND. SYMBOL VI(max) PARAMETER maximum DC input voltage during inductive turn-off; note 1 ID VOOB IOOB Idemag Vctrl Vlsense Iref Vaux Tj Tstg Ves supply current mode detect input voltage mode detect input current demagnetization input current feedback input voltage current sense input voltage reference input current auxiliary supply voltage operating junction temperature storage temperature electrostatic handling voltage class 2 human body model; note 3 machine model; note 4 Notes 1. Repetitive clamped inductive turn-off energy <15 mJ. 2. Single pulse avalanche energy at Tj < 25 C: 570 mJ. 3. Equivalent to discharging a 100 pF capacitor through a 1.5 k resistor. 4. Equivalent to discharging a 200 pF capacitor through a 0.75 mH coil. THERMAL CHARACTERISTICS SYMBOL IC controller Rth(j-a) Rth(j-c) Power FET Rth(j-a) Rth(j-c) thermal resistance from junction to ambient thermal resistance from junction to case 37 0.85 K/W K/W thermal resistance from junction to ambient thermal resistance from junction to case 70 31 K/W K/W PARAMETER VALUE UNIT - - 2500 250 V V CONDITIONS - - - -0.3 - - -0.3 -0.3 - -0.3 -10 -40 MIN. MAX. 600 720 7 +14 +2 1 +5 +5 -1 +18 +140 +150 UNIT V V A V mA mA V V mA V C C
QUALITY SPECIFICATION In accordance with "SNW-FQ-611 part E".
1999 Apr 20
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Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
TEA1566
CHARACTERISTICS Tj = -10 to +110 C; Vin = 300 V; Vaux = 8.6 to 13 V; RIref = 24.9 k 0.1%; all currents into the chip are positive and all currents out of the chip are negative; all voltages are measured with respect to ground. SYMBOL PARAMETER CONDITIONS MIN. - 60 350 TYP. MAX. - 100 550 UNIT
Input voltage and current on pin 9 Vdlow Iin Iin(off) Vstart Vuvlo Vhys Istart(low) Istart(high) laux Irestart(prot) Irestart(stdby) Vclamp Vref Rref Oscillator fosc-l fosc-h max fratio fosc-h-range Vth(comp) tPD Ibias Vclamp(neg) Vclamp(pos) Idem lth(sh) tPD low frequency high frequency maximum duty cycle ratio fosc-h/fosc-l range of fosc-h demag comparator threshold propagation delay to output buffer input bias current negative clamp level positive clamp level Vdem = 65 mV Idem = -500 A Idem = 100A lref = 100 A % of Idem Vdemag/t positive Vdemag/t negative 11 with changing RIREF Vdem decreasing low power mode; CIREF = 50 nF normal mode; CIREF = 50 nF f = fosc-h 27.5 66 78 2.30 50 29 70 80 2.45 70 30.5 74 82 2.60 100 kHz kHz kHz % minimum start drain voltage input current off mode current normal operation VOOB < 1.95 V 100 20 150 V A A
Start-up current source and Vaux management on pin 2 start-up voltage under voltage lockout operation voltage hysteresis start-up current start-up current IC supply current restart current restart current clamp voltage level Vstart-Vuvlo 0 V < Vaux < 0.5 V 0.5 V < Vaux < Vstart in high frequency mode in protection mode in stand-by mode laux = 5 mA (non switching) capacitor pin Iref = 50 nF 10.4 7.4 2.60 -270 -5.0 7.0 -600 -2.5 15 11 8.05 2.95 -230 -3.0 7.7 -530 -2.1 - 11.6 8.6 3.30 -190 -1.0 8.5 -460 -1.7 18 V V V A mA mA A mA V
Reference input on pin 3 reference voltage operating resistor range 2.37 16.9 2.47 24.9 2.57 33.2 V k
Demagnetization input on pin 6 50 300 65 500 80 700 mV ns
-0.50(1) - -0.45 2.3 -0.35 2.6
-0.10(1) A 0 2.9 V V A % ns ns
Sample and hold input on pin 6 normal control current sample threshold current propagation delay of current comparator 90 78 170 20 100 83 450 90 110 88 730 160
1999 Apr 20
Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
TEA1566
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Over voltage protection on pin 2 VOVP td(OVP) tLEB absolute maximum OVP level fixed maximum level OVP delay time Rref = 0.7 x Rref(nom) Rref = Rref(nom) Rref = 1.3 x Rref(nom) Vth(Imax) td maximum current limit voltage delay to MOSFET off time to MOSFET off at dV/dt = 200 mV/s; Cgs = 500 pF 14.0 350 14.7 550 15.5 800 V ns
Isense and low power on pin 1 leading edge blanking time 180 240 415 0.46 150 260 340 470 0.49 210 340 440 560 0.53 270 ns ns ns V ns
Vth(lopower) Control d/dV VCTRL(min) VCTRL(max) ICTRL(leak)
threshold voltage
for switch over to low power 155 -95 -60 2.00 2.90 note 1 -1
165 -85 -50 2.15 3.05 -
175 -75 -40 2.30 3.20 +1
mV
gain minimum control voltage on pin 4 maximum control voltage on pin 4 leakage current in/out on pin 4
fosc-h fosc-l
%/V %/V V V A
Over temperature protection Ttrip Von/off Vburst IOOB VDS(break) RDS(on) temperature limit 130 140 155 C
On/off/burst mode selection input on pin 7 on/off trip level burst mode trip level output current on pin OOB active inactive VOOB > 400 mV; note 1 Tj = 25 C; Vgs = 0 V; Id = 0.25 mA Tj = 25 C; Vgs = 10 V; Vaux = 10 V; Id = 7A Power MOSFET 7N60E; note 2 drain-to-source breakdown voltage drain-to-source on-state resistance 600 - - 1.0 - 1.2 V 2.3 6.5 - -5 2.5 - - - 2.8 7.5 5.5 -0.1 V V V A
Notes 1. Min. and max. values are guaranteed by design. 2. The power MOSFET outputs of these devices are similar to the Philips Semiconductor type PHP7N60. These devices feature an excellent combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
1999 Apr 20
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Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
TEA1566
MGR937
handbook, halfpage
160
103 handbook, halfpage
MGR939
P (W) 120 Cj (pF)
80
102
Coss
40
0 0 40 80 120 160 Tcase (C)
10 1 10
102
VDS (V)
103
Fig.8 Normalised power derating.
Fig.9 Junction capacitance.
handbook, halfpage
3
MGR938
MGR940
handbook, halfpage
1.2
a
a
2
1.1
1
1
0 -80
0
80
Tj (C)
160
0.9 -100
0
100
Tj (C)
200
a = RDS(on) / RDS(on) at 25 C. ID = 6.2 A; Vaux > 10 V.
Fig.10 Normalised drain-to-source on-state resistance.
Fig.11 Normalised drain-to-source breakdown voltage.
1999 Apr 20
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Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
TEA1566
handbook, full pagewidth
I vc closed open Vctrl Vaux
I MAX Vin CLAMP CIRCUIT
L
TEA1566
Dem
Isense Gnd CURRENT SENSING CIRCUIT
VS
MGR941
VS = 50 V; IMAX = 7 A Vdem = 0.5 V; Vaux = 11 V IVC = 6 mA; VCLAMP = 720 V L = 25 mH
Fig.12 Clamped inductive test circuit.
APPLICATION INFORMATION A converter using the GreenChipTM is usually a flyback or a Buck converter that is made up of the EMI filter, full bridge rectifier, filter capacitor, transformer, output stage(s), and some snubber circuitry. Depending upon the type of feedback used, either an auxiliary winding (primary regulation) or an opto-coupler (secondary regulation) is used. GreenChipTM, due to its high level of integration uses very few external components. A sense resistor converts the primary current into a voltage on pin Isense. The IC uses this information for setting the peak current in the converter. A capacitor supplied by an auxiliary winding buffers the internal supply of the IC and is connected on pin Vaux. The auxiliary winding is also used for primary mode output voltage regulation. A resistor connected on pin Iref sets the reference currents in the IC. A small capacitor (0.2 to 2 nF) connected on pin Vctrl is used by the internal sample and hold circuit for regulation in primary feedback scheme. The same pin is also used for secondary sensing and serves as the input for the signal from the opto-coupler. Pin Gnd is the ground connection pin.
The primary side auxiliary winding is connected via a resistor to pin Dem. Besides being used for demagnetization protection, pin Dem is also used for primary side regulation. Pin OBB is a multi use pin and depending upon connection can be used for implementation of the on/off/burst mode functions. Pin 8 is not connected and serves as a high voltage spacer pin. Pin Vin is the connection for the drain of the internal power MOSFET and is a high voltage pin. The internal start-up current source also uses this pin as a supply for charging up the Vaux capacitor during start-up and safe-restart modes. GreenChipTM is a versatile IC that can be used in flyback and Buck converter topologies and can be configured to work in different modes. The application diagrams on the next pages give some examples. For additional information also see: * Application note AN98011: "200 W SMPS with TEA1504" * Application note AN98058: "75 W SMPS with TEA1566".
1999 Apr 20
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Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
TEA1566
handbook, full pagewidth
mains output
9
Vin ROOB S1 RDEM
8 NC 7 6 OOB Dem
TEA1566 5 Gnd
4 3 2 1 Vctrl Iref Vaux CREF Isense CAUX RSENSE
MGR697
RREF RCTRL
Fig.13 Typical flyback configuration with secondary sensing and on/off feature.
1999 Apr 20
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Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
TEA1566
handbook, full pagewidth
mains output R1 S1 R2 from microcontroller
S2
9 8 7 6
Vin NC OOB Dem
microcontroller supply
Vz Gnd Vctrl Iref Vaux Isense R3
TEA1566 5
4 3 2 1
MGR698
Fig.14 Flyback configuration using the burst mode stand-by, MUVLO and on/off features.
1999 Apr 20
16
Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
TEA1566
handbook, full pagewidth
mains output
9 8 7 6
Vin NC OOB Dem Gnd Vctrl Iref Vaux Isense
TEA1566 5
4 3 2 1
MGR699
Fig.15 Typical Buck configuration with primary sensing.
handbook, full pagewidth
mains output
9 8 7 6
Vin NC OOB Dem Gnd Vctrl Iref Vaux Isense
TEA1566 5
4 3 2 1
MGR700
Fig.16 Typical Buck configuration with secondary sensing.
1999 Apr 20
17
Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
PACKAGE OUTLINES SIL9P: plastic single in-line power package; 9 leads
TEA1566
SOT131-2
non-concave x Dh
D Eh
view B: mounting base side d A2
B seating plane j E
A1 b
L
c 1 Z e bp wM 0 5 scale DIMENSIONS (mm are the original dimensions) UNIT mm A1 max. 2.0 A2 4.6 4.2 b max. 1.1 bp 0.75 0.60 c 0.48 0.38 D (1) 24.0 23.6 d 20.0 19.6 Dh 10 E (1) 12.2 11.8 e 2.54 Eh 6 j 3.4 3.1 L 17.2 16.5 Q 2.1 1.8 w 0.25 x 0.03 Z (1) 2.00 1.45 10 mm 9 Q
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT131-2 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 92-11-17 95-03-11
1999 Apr 20
18
Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
TEA1566
DBS9P: plastic DIL-bent-SIL power package; 9 leads (lead length 12 mm)
SOT157-2
non-concave D x Dh
Eh
view B: mounting base side
d
A2
B j E A
L3
L
Q c vM
1 Z e1 e bp wM
9 m e2
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 17.0 15.5 A2 4.6 4.2 bp 0.75 0.60 c 0.48 0.38 D (1) 24.0 23.6 d 20.0 19.6 Dh 10 E (1) 12.2 11.8 e 5.08 e1 e2 Eh 6 j 3.4 3.1 L 12.4 11.0 L3 2.4 1.6 m 4.3 Q 2.1 1.8 v 0.8 w 0.25 x 0.03 Z (1) 2.00 1.45
2.54 5.08
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT157-2 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-03-11 97-12-16
1999 Apr 20
19
Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
SOLDERING Introduction to soldering through-hole mount packages This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board. Soldering by dipping or by solder wave The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joints for more than 5 seconds.
TEA1566
The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. Manual soldering Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods SOLDERING METHOD PACKAGE DIPPING DBS, DIP, HDIP, SDIP, SIL Note 1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. suitable suitable(1) WAVE
1999 Apr 20
20
Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
NOTES
TEA1566
1999 Apr 20
21
Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
NOTES
TEA1566
1999 Apr 20
22
Philips Semiconductors
Preliminary specification
GreenChipTM; SMPS module
NOTES
TEA1566
1999 Apr 20
23
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
295002/50/01/pp24
Date of release: 1999 Apr 20
Document order number:
9397 750 03312


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